cameroon gce A level 2024 power electronics 1
cameroon gce A level 2024 power electronics 1
The V–I characteristics for a triac in the first and third
quadrants are essentially identical to those of
its first quadrant
A Transistor
B SCR
C UJT
D Diode
in
10. Figure 2 represents the symbol of a:
2. The semiconductor component most suited for high
frequency applications is
A BJT
B IGBT
C MOSFET
D SCR
1
Figure 2
A Diode.
B Triac.
C Diac.
D Thyristor.
3. N channel MOSFET is considered better than the Pchannel MOSFET due to its
A Low noise levels
B TTL compatibility
C Lower input independence
D Faster operation
11. A TRIAC has three terminals namely
A Drain, Source, Gate
B Two main terminal and a gate terminal
C Cathode, Anode, Gate
4. A triac is equivalent to two SCRs D Phase, Neutral , Gate
A In parallel
B In series
C Inverse Parallel
D Semi parallel
12. A DIAC has
A Two terminals
B Three terminals
C Four terminals
5. An SCR behaves as a D Five terminals
A Unidirectional
B Bidirectional
C Mechanical
D Transistor
switch
13.
6. A TRIAC is a
A Bidirectional switch
B Unidirectional switch
C Mechanical switch
D Unidirectional and mechanical switch
Figure 3
Figure 3 has as period T equals to
A T/2
B –T/4
C T/4
D 3T/4
7.
Figure 1
Figure 1 is a symbol of
A Rectifier
B Inverter
C Chopper
D Cycloconverter
14. For a single phase half wave rectifier, with R load,
the diode is reversed biased from
A 0 to 7t
, 2TT to 3?t
B 71 tO 27C
, 37C tO 471
C 7i to 2K
, 2K to 37t
D 0 tO 71
, 371 tO 471
8. A thyristor has a minimum anode current to sustain
conduction called
A Gate current
B Latch current
C Holding current
D Surge current
15. A DIAC is turned ON by
A Gate current
B Gate voltage
C Break over voltage
D Break over current